transistor LAE4002R datasheet

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LAE4002R

SI NPN transistor

U_CE/U_CB

35V/40V

I_C

90mA

h_FE

15-150

f_T

4GHz

P_tot

0.625W

T_J

200°C

the LAE4002R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz

Picture

-

Source

PSC Philips Data Han... [more]

Advanced Information for LAE4002R

OEM:

Philips Semi... [more]

Package:

LAE4002R Info:

-

LAE4002R datasheet (pdf):

-

-

-

complementary type:

-

LAE4002R

SI NPN transistor

U_CE/U_CB

35V/40V

I_C

90mA

h_FE

15-150

f_T

4GHz

P_tot

0.625W

T_J

200°C

the LAE4002R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz

Picture

-

Source

PSC Philips Data Han... [more]

Advanced Information for LAE4002R

OEM:

Philips Semi... [more]

Package:

LAE4002R Info:

-

LAE4002R datasheet (pdf):

-

-

-

complementary type:

-