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LAE4001R
SI NPN transistor
U
CE
/U
CB
25V/30V
I
C
80mA
h
FE
20-220
f
T
4GHz
P
tot
0.48W
T
J
200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Picture
-
Source
PSC Philips Data Han...
[more]
Advanced Information for LAE4001R
OEM:
Philips Semi...
[more]
Package:
SOT100
LAE4001R Info:
-
LAE4001R datasheet (pdf):
-
-
-
complementary type:
-
similar type list:
-
similar type search:
search similar
LAE4001R
SI NPN transistor
U
CE
/U
CB
25V/30V
I
C
80mA
h
FE
20-220
f
T
4GHz
P
tot
0.48W
T
J
200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Picture
-
Source
PSC Philips Data Han...
[more]
Advanced Information for LAE4001R
OEM:
Philips Semi...
[more]
Package:
SOT100
LAE4001R Info:
-
LAE4001R datasheet (pdf):
-
-
-
complementary type:
-
similar type list:
-
similar type search:
search similar
agb
