transistor MX1011B430Y datasheet

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MX1011B430Y

SI NPN transistor

U_CE/U_CB

65V/65V

I_C

35A

h_FE

-

f_T

1.09GHz

P_tot

1.2kW

T_J

200°C

the MX1011B430Y is a silicon NPN microwave power transistor preferred for use as common base class C broadband pulsed power amplifier for TCAS applications in the 1030MHz to 1090MHz band

Picture

-

Source

PSC Philips Data Han... [more]

Advanced Information for MX1011B430Y

OEM:

Philips Semi... [more]

Package:

SOT439A

MX1011B430Y Info:

-

MX1011B430Y datasheet (pdf):

-

-

-

complementary type:

-

MX1011B430Y

SI NPN transistor

U_CE/U_CB

65V/65V

I_C

35A

h_FE

-

f_T

1.09GHz

P_tot

1.2kW

T_J

200°C

the MX1011B430Y is a silicon NPN microwave power transistor preferred for use as common base class C broadband pulsed power amplifier for TCAS applications in the 1030MHz to 1090MHz band

Picture

-

Source

PSC Philips Data Han... [more]

Advanced Information for MX1011B430Y

OEM:

Philips Semi... [more]

Package:

SOT439A

MX1011B430Y Info:

-

MX1011B430Y datasheet (pdf):

-

-

-

complementary type:

-