transistor LAE4001R datasheet

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LAE4001R

SI NPN transistor

U_CE/U_CB

25V/30V

I_C

80mA

h_FE

20-220

f_T

4GHz

P_tot

0.48W

T_J

200°C

the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz

Picture

-

Source

PSC Philips Data Han... [more]

Advanced Information for LAE4001R

OEM:

Philips Semi... [more]

Package:

LAE4001R Info:

-

LAE4001R datasheet (pdf):

-

-

-

complementary type:

-

LAE4001R

SI NPN transistor

U_CE/U_CB

25V/30V

I_C

80mA

h_FE

20-220

f_T

4GHz

P_tot

0.48W

T_J

200°C

the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz

Picture

-

Source

PSC Philips Data Han... [more]

Advanced Information for LAE4001R

OEM:

Philips Semi... [more]

Package:

LAE4001R Info:

-

LAE4001R datasheet (pdf):

-

-

-

complementary type:

-